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this is information on a product in full production. november 2012 doc id 023207 rev 1 1/19 19 stb15n65m5, STD15N65M5 n-channel 650 v, 0.308 typ., 11 a mdmesh? v power mosfet in d 2 pak and dpak packages datasheet ? production data features worldwide best r ds(on) * area higher v dss rating and high dv/dt capability excellent switching performance 100% avalanche tested applications switching applications description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order codes v ds @ t jmax r ds(on) max i d stb15n65m5 710 v < 0.34 11 a STD15N65M5 d 2 pak dpak 1 3 2 tab 1 3 tab !-v $4!" ' 3 table 1. device summary order codes marking package packaging stb15n65m5 15n65m5 d 2 pa k tape and reel STD15N65M5 dpak www.st.com
contents stb15n65m5, STD15N65M5 2/19 doc id 023207 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
stb15n65m5, STD15N65M5 electrical ratings doc id 023207 rev 1 3/19 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 11 a i d drain current (continuous) at t c = 100 c 6.9 a i dm (1) drain current (pulsed) 44 a p tot total dissipation at t c = 25 c 85 w dv/dt (1) 1. i sd 11 a, di/dt 400 a/s; v dd = 400 v, v ds(peak) < v (br)dss peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit d 2 pa k d pa k r thj-case thermal resistance junction-case max 1.47 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board. thermal resistance junction-pcb max 30 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax ) 2.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar ; v dd =50 v) 160 mj
electrical characteristics stb15n65m5, STD15N65M5 4/19 doc id 023207 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 5.5 a 0.308 0.34 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 816 23 2.6 - pf pf pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 520 v, v gs = 0 -70-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -21-pf r g intrinsic gate resistance f = 1 mhz open drain - 5 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 5.5 a, v gs = 10 v (see figure 18 ) - 22 5.5 11 - nc nc nc
stb15n65m5, STD15N65M5 electrical characteristics doc id 023207 rev 1 5/19 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(v) t r (v) t f (i) t c(off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 7 a, r g = 4.7 , v gs = 10 v (see figure 19 and figure 22 ) - 30 8 11 12.5 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 11 44 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 11 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 11 a, di/dt = 100 a/s v dd = 100 v (see figure 22 ) - 247 2.4 19.5 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 11 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 22 ) - 312 3 19 ns c a
electrical characteristics stb15n65m5, STD15N65M5 6/19 doc id 023207 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area for d2pak figure 3. thermal impedance for d2pak figure 4. safe operating area for dpak figure 5. thermal impedance for dpak figure 6. output characteristics figure 7. transfer characteristics i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am152 8 5v1 i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am152 8 4v1 i d 15 10 5 0 0 10 v d s (v) 20 (a) 5 15 20 v g s = 6 v v g s = 7 v v g s = 9, 10 v 25 v g s = 8 v am152 8 7v1 i d 15 10 5 0 3 5 v g s (v) 7 (a) 4 6 8 20 9 v d s = 25 v am152 88 7v1
stb15n65m5, STD15N65M5 electrical characteristics doc id 023207 rev 1 7/19 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =520v i d =5.5a 25 3 00 200 100 0 400 500 v d s (v) v d s 12 am152 8 9v1 r d s (on) 0. 3 1 0.29 0.27 0.25 0 4 i d (a) ( ) 2 6 0. 33 0. 3 5 v g s =10v 8 10 am1529 3 v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am15290v1 e o ss 1 0.5 0 0 100 v d s (v) ( j) 400 1.5 200 3 00 2 2.5 500 600 3 3 .5 4 am15291v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d = 250 a v d s = v g s am05459v2 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 v g s = 10 v i d = 5.5 a am05460v2
electrical characteristics stb15n65m5, STD15N65M5 8/19 doc id 023207 rev 1 figure 14. source-drain diode forward characteristics figure 15. normalized b vdss vs temperature figure 16. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.04 1.06 1.02 i d = 1ma 1.0 8 am10 3 99v1 e 0 0 20 r g ( ) ( j) 10 3 0 20 40 40 i d =7a v dd =400v eon eoff 60 v g s =10v 8 0 50 100 120 am15292v1
stb15n65m5, STD15N65M5 test circuits doc id 023207 rev 1 9/19 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform !-v 6 '3 0 7 6 $ 2 ' 2 , $54 & & 6 $$ !-v 6 $$ k k k k k 6 6 i 66 '-!8 & 0 7 ) ' #/.34 n& $54 6 ' !-v ! $ $54 3 " ' ! ! " " 2 ' ' &!34 $)/$% $ 3 , ( & & 6 $$ !-v 6 i 0 w 6 $ ) $ $54 , & & 6 $$ !-v 6 "2 $33 6 $$ 6 $$ 6 $ ) $- ) $ am05540v1 ind u ctive lo a d t u rn -off id vg s vd s 90 % vd s 10 % id 90 % vg s on t d (v) t c (off) 10 % vd s 90 % id vg s (i(t)) on t f (i) t r (v) ))
package mechanical data stb15n65m5, STD15N65M5 10/19 doc id 023207 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
stb15n65m5, STD15N65M5 package mechanical data doc id 023207 rev 1 11/19 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data stb15n65m5, STD15N65M5 12/19 doc id 023207 rev 1 figure 23. d2pak (to-263) drawing figure 24. d2pak footprint (a) a. all dimensions are in millimeters 0079457_t 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
stb15n65m5, STD15N65M5 package mechanical data doc id 023207 rev 1 13/19 table 10. dpak (to-252) mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1 1.50 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
package mechanical data stb15n65m5, STD15N65M5 14/19 doc id 023207 rev 1 figure 25. dpak (to-252) drawing figure 26. dpak footprint (b) b. all dimensions are in millimeters 006 8 772_i 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1
stb15n65m5, STD15N65M5 packaging mechanical data doc id 023207 rev 1 15/19 5 packaging mechanical data table 11. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
packaging mechanical data stb15n65m5, STD15N65M5 16/19 doc id 023207 rev 1 table 12. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
stb15n65m5, STD15N65M5 packaging mechanical data doc id 023207 rev 1 17/19 figure 27. tape for d2pak (to-263) and dpak (to-252) figure 28. reel for d2pak (to-263) and dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history stb15n65m5, STD15N65M5 18/19 doc id 023207 rev 1 6 revision history table 13. document revision history date revision changes 09-nov-2012 1 first release.
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